• DocumentCode
    1105988
  • Title

    Backgating characteristics of MODFET structures

  • Author

    Ezis, A. ; Langer, D.W.

  • Author_Institution
    Universal Energy Systems, Inc., Dayton, OH
  • Volume
    6
  • Issue
    10
  • fYear
    1985
  • fDate
    10/1/1985 12:00:00 AM
  • Firstpage
    494
  • Lastpage
    496
  • Abstract
    Significant backgating in mesa-isolated AlGaAs/GaAs MODFET structures is reported. Results are presented on the influence of backgate potential on the electrical characteristics of enhancement-mode MODFET´s fabricated on MBE grown material. An observed zero threshold voltage for the onset of backgating is attributed to a high level of current leakage in the high-purity GaAs buffer layer. Transconductance and capacitance-voltage measurements on MODFET´s show that the backgate potential influences primarily the electrical properties of the 2-D electron gas channel and the adjacent AlGaAs layer.
  • Keywords
    Buffer layers; Capacitance measurement; Capacitance-voltage characteristics; Electric potential; Electric variables; Gallium arsenide; HEMTs; MODFETs; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26206
  • Filename
    1485359
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1105988