• DocumentCode
    1106014
  • Title

    Temperature dependence of the Hooge parameter in n-channel Silicon JFET´s

  • Author

    Pawlikiewicz, A. ; van der Ziel, A.

  • Author_Institution
    University of Minnesota, Minneapolis, MN
  • Volume
    6
  • Issue
    10
  • fYear
    1985
  • fDate
    10/1/1985 12:00:00 AM
  • Firstpage
    500
  • Lastpage
    501
  • Abstract
    The Hooge noise parameter αHof n-channel Si-JFET\´s was measured as a function of temperature between 250 and 400 K. The data are in full agreement with an earlier heuristic quantum 1/f noise expression introduced by van der Ziel et al. and based on Handel\´s quantum 1/f noise theory.
  • Keywords
    Effective mass; Equations; Lattices; Noise generators; Noise measurement; Phonons; Silicon; Temperature dependence; Temperature distribution; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26208
  • Filename
    1485361
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1106014