DocumentCode :
1106014
Title :
Temperature dependence of the Hooge parameter in n-channel Silicon JFET´s
Author :
Pawlikiewicz, A. ; van der Ziel, A.
Author_Institution :
University of Minnesota, Minneapolis, MN
Volume :
6
Issue :
10
fYear :
1985
fDate :
10/1/1985 12:00:00 AM
Firstpage :
500
Lastpage :
501
Abstract :
The Hooge noise parameter αH of n-channel Si-JFET\´s was measured as a function of temperature between 250 and 400 K. The data are in full agreement with an earlier heuristic quantum 
noise expression introduced by van der Ziel et al. and based on Handel\´s quantum noise theory.
noise expression introduced by van der Ziel et al. and based on Handel\´s quantum noise theory.Keywords :
Effective mass; Equations; Lattices; Noise generators; Noise measurement; Phonons; Silicon; Temperature dependence; Temperature distribution; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26208
Filename :
1485361
Link To Document :
