DocumentCode
1106038
Title
Comparison of GaAs MESFET and GaAs p-i-n diodes as switch elements
Author
Gopinath, A.
Author_Institution
M.I.T. Lincoln Laboratory, Lexington, MA
Volume
6
Issue
10
fYear
1985
fDate
10/1/1985 12:00:00 AM
Firstpage
505
Lastpage
506
Abstract
The Kurokawa-Schlosser quality factor Q̂ is used to compare the GaAs MESFET switch with the GaAs p-i-n diode switch. The MESFET device parameters are governed by the power handling capability and the specified pinchoff voltage, and the switch Q̂ is calculated from an approximate expression. The GaAs p-i-n has been characterized using a simple diode model which is derived from detailed simulations. The comparison for typical devices shows that the GaAs pin has the higher Q̂ and therefore should have improved characteristics as a switch in terms of insertion loss and isolation.
Keywords
Capacitance; Contact resistance; Electrical resistance measurement; Gallium arsenide; Length measurement; MESFETs; P-i-n diodes; Phase frequency detector; Surface resistance; Switches;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26210
Filename
1485363
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