Title :
40 Gbit/s electroabsorption modulators with 1.1 V driving voltage
Author :
Fukano, H. ; Yamanaka, T. ; Tamura, M. ; Nakajima, H. ; Akage, Y. ; Kondo, Y. ; Saitoh, T.
Author_Institution :
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
Abstract :
40 Gbit/s electroabsorption modulators with an RF extinction ratio of 10 dB and driven by a peak-to-peak voltage as low as 1.1 V have been successfully fabricated. This low driving voltage is achieved by employing strain-compensated InGaAlAs/InAlAs multi-quantum-well layers with very good extinction characteristics and by optimising the number of wells and electroabsorption length.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; semiconductor quantum wells; 1.1 V; 40 Gbit/s; InGaAlAs-InAlAs; RF extinction ratio; driving voltage; electroabsorption length; electroabsorption modulators; fabrication; strain-compensated InGaAlAs-InAlAs multiquantum-well layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045968
