High-finesse resonant-cavity photodetectors with an adjustable resonance frequency

Author

Murtaza, S.S. ; Tan, I.H. ; Bowers, J.E. ; Hu, E.L. ; Anselm, K.A. ; Islam, M.R. ; Chelakara, R.V. ; Dupuis, R.D. ; Streetman, B.G. ; Campbell, J.C.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

14

Issue

6

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

1081

Lastpage

1089

Abstract

High speeds, high external quantum efficiencies, narrow spectral linewidths, and convenience in coupling make resonant-cavity photodetectors (RECAP´s) good candidates for telecommunication applications. In this paper, we present analytical expressions for the design of RECAP´s with narrow spectral linewidths and high quantum efficiencies. We also present experimental results on a RECAP having an operating wavelength λ₀≈1.3 μm with a very narrow spectral response. The absorption takes place in a thin In_0.53Ga_0.47As layer placed in an InP cavity. The InP p-i-n structure was wafer bonded to a high-reflectivity GaAs/AlAs quarter-wavelength Bragg reflector. The top mirror consisted of three pairs of a ZnSe/CaF₂ quarter-wavelength stack (QWS). A spectral linewidth of 1.8 nm was obtained with an external quantum efficiency of 48%. We also demonstrate that the spectral response can be tailored by etching the top layer of the microcavity. The results are found to agree well with those obtained from analytical expressions derived on the assumption of linear-phase Bragg reflectors as well as detailed simulations performed using the transfer matrix method

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; light absorption; mirrors; optical communication equipment; optical couplers; optical films; optical resonators; photodetectors; reflectivity; spectral line breadth; 1.3 mum; 48 percent; AlAs; CaF₂; GaAs; In_0.53Ga_0.47As; InP; InP cavity; InP p-i-n structure; ZnSe; ZnSe/CaF₂ quarter-wavelength stack; adjustable resonance frequency; external quantum efficiency; high external quantum efficiencies; high quantum efficiencies; high-finesse resonant-cavity photodetectors; high-reflectivity GaAs/AlAs quarter-wavelength Bragg reflector; linear-phase Bragg reflectors; narrow spectral linewidths; operating wavelength; spectral linewidth; spectral response; telecommunication applications; thin In_0.53Ga_0.47As layer; top layer; top mirror; transfer matrix method; very narrow spectral response; Absorption; Etching; Gallium arsenide; Indium phosphide; Mirrors; PIN photodiodes; Photodetectors; Resonance; Wafer bonding; Zinc compounds;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.511609

Filename

511609