DocumentCode
1106090
Title
High-voltage bipolar mode JFET with normally off characteristics
Author
Bellone, S. ; Caruso, A. ; Spirito, P. ; Vitale, G.F. ; Busatto, G. ; Cocorullo, G. ; Ferla, G. ; Musumeci, S.
Author_Institution
Dep. Ingegneria Electrica, Naples, Italy
Volume
6
Issue
10
fYear
1985
fDate
10/1/1985 12:00:00 AM
Firstpage
522
Lastpage
524
Abstract
The first realization of a power vertical JFET operated in the bipolar mode (BJFET) with normally off behavior is reported. The structure combines minority carrier injection from the gate region in the on-state, and lateral pinch-off of the channel, due to the built-in voltage, in the off-state. The realized devices show high blocking voltages, up to 900 V, with zero gate bias, and have extremely low on-resistance. Fast switching speeds with forced gate turn-off times as low as 100 ns for devices of 600-V blocking voltages have been obtained.
Keywords
Conductivity; Current density; Degradation; Displays; Doping; Low voltage; MOSFET circuits; P-n junctions; Power MOSFET; Voltage control;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26216
Filename
1485369
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