مرکز منطقه ای اطلاع رساني علوم و فناوري - Low-resistance ohmic contacts to p-type GaAs using Zn/Pd/Au metallization

DocumentCode :

1106107

Title :

Low-resistance ohmic contacts to p-type GaAs using Zn/Pd/Au metallization

Author :

Brooks, R.C. ; Chen, C.L. ; Chu, A. ; Mahoney, L.J. ; Mavroides, J.G. ; Manfra, M.J. ; Finn, M.C.

Author_Institution :

Raytheon Company, Lexington, MA

Volume :

Issue :

fYear :

1985

fDate :

10/1/1985 12:00:00 AM

Firstpage :

525

Lastpage :

527

Abstract :

We have fabricated the low resistance ohmic contacts to p-type GaAs. Specific contact resistances as low as 7 × 10^-7Ω.cm²have been obtained for contacts prepared by heat treating Zn/Pd/Au metallizations deposited on p-type epitaxial GaAs layers with an acceptor concentration of 1.5 × 10¹⁹cm^-3. These contacts are reproducible, simple to fabricate, exhibit excellent adhesion, and have a uniformly smooth surface morphology.

Keywords :

Adhesives; Contact resistance; Gallium arsenide; Gold; Metallization; Ohmic contacts; Resistance heating; Surface morphology; Surface treatment; Zinc;

fLanguage :

English

Journal_Title :

Electron Device Letters, IEEE

Publisher :

ieee

ISSN :

0741-3106

Type :

jour

DOI :

10.1109/EDL.1985.26217

Filename :

1485370

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1106107