Title :
Method for extracting series resistance in MOS devices using Fowler-Nordheim plot
Author_Institution :
Dept. d´´Enginyeria Electron., Univ. Autonoma de Barcelona, Spain
Abstract :
A new method for determining the series resistance affecting the tunnelling current in MOS devices is presented. The proposed approach consists of considering the effect of the potential drop associated with this resistance on the Fowler-Nordheim tunnelling expression. The resistance is found by forcing the highest possible linearity of the Fowler-Nordheim plot.
Keywords :
MIS capacitors; electrical resistivity; semiconductor device models; tunnelling; Fowler-Nordheim plot; Fowler-Nordheim tunnelling; MOS devices; extracting series resistance; tunnelling current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045581
