DocumentCode :
1106122
Title :
Millimeter-wave low-noise high electron mobility transistors
Author :
Chao, P.C. ; Palmateer, S.C. ; Smith, P.M. ; Mishra, U.K. ; Duh, K.H.G. ; Hwang, J.C.M.
Author_Institution :
General Electric Company, Syracuse, NY
Volume :
6
Issue :
10
fYear :
1985
fDate :
10/1/1985 12:00:00 AM
Firstpage :
531
Lastpage :
533
Abstract :
High electron mobility transistors (HEMT\´s) have been fabricated which demonstrate excellent millimeter-wave performance. A maximum extrinsic transconductance as high as 430 mS/mm, corresponding to an intrinsic transconductance of 580 mS/mm, was observed in these transistors. A unity current gain cutoff frequency fT as high as 80 GHz and a maximum frequency of oscillation 
of 120 GHz were projected for these HEMT\´s. At 40 GHz, a minimum noise figure of 2.1 dB with an associated gain of 7.0 dB has also been measured. These are the highest 
, and the best noise performance reported to date. The results clearly demonstrate the potential of HEMT\´s for millimeter-wave low-noise applications.
of 120 GHz were projected for these HEMT\´s. At 40 GHz, a minimum noise figure of 2.1 dB with an associated gain of 7.0 dB has also been measured. These are the highest , and the best noise performance reported to date. The results clearly demonstrate the potential of HEMT\´s for millimeter-wave low-noise applications.Keywords :
Cutoff frequency; Equivalent circuits; Fabrication; Gain measurement; HEMTs; MODFETs; Millimeter wave technology; Millimeter wave transistors; Noise figure; Transconductance;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26219
Filename :
1485372
Link To Document :
