DocumentCode :
1106172
Title :
An isolated MISS regenerative switching device
Author :
Chang, C.Y. ; Tzeng, F.C. ; Chen, C.T. ; Wang, S.J. ; Wang, Y.D.
Author_Institution :
National Cheng Kung University, Tainan, Taiwan
Volume :
6
Issue :
10
fYear :
1985
fDate :
10/1/1985 12:00:00 AM
Firstpage :
545
Lastpage :
547
Abstract :
A new MISS switching device structure was designed and fabricated, which consists of Al/thin thermal oxide/p-n+-p-Si layers and is isolated by diffusing n-well to the buried n+layer. Furthermore, an N+-shield layer which confines the carrier flow to the MIS interface and a p+-gate which injects carriers in the n+-p junction were successfully implemented. The device reveals that switching and holding voltages Vs and VH both decrease with increasing 
, and with decreasing 
. The fringing effect is minimized due to the isolated structure.
, and with decreasing . The fringing effect is minimized due to the isolated structure.Keywords :
Charge carrier processes; Dielectrics; Electrodes; Fabrication; Helium; Metal-insulator structures; P-n junctions; Temperature; Tunneling; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26224
Filename :
1485377
Link To Document :
