Dependence of channel electric field on device scaling

Author

Chan, T.Y. ; Ko, P.K. ; Hu, C.

Author_Institution

University of California, Berkeley, CA

Volume

6

Issue

10

fYear

1985

fDate

10/1/1985 12:00:00 AM

Firstpage

551

Lastpage

553

Abstract

It has been shown previously that the maximum channel electric field Emin a MOSFET is the most important parameter relating to all hot-electron effects and that Emcan be represented as ( $V_{DS} - V_{DSAT})/l$ , where $l$ may be regarded as the effective length of the velocity-saturation region. The dependence of l on device geometries and process parameters is investigated in this letter. From both experiment and two-dimensional (2-D) simulation, it is found that Emhas a form of ( $V_{DS} - V_{DSAT})/ 0.22T\\min{ox}\\max {1/3}X\\min{j}\\max {1/2}$ . Channel length affects the saturation voltage, thus influencing the maximum channel electric field. The scaling of oxide thickness and junction depth, however, often has even greater effects on channel field. This semiempirical model of Emagrees with Emdeduced from ISUBwithin about 5 percent; it can predict ISUB, which has been empirically correlated with hot-electron degradations.

Keywords

Degradation; Equations; Geometry; Helium; Intrusion detection; MOSFET circuits; Parameter estimation; Predictive models; Two dimensional displays; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/EDL.1985.26226

Filename

1485379