DocumentCode :
1106191
Title :
Dependence of channel electric field on device scaling
Author :
Chan, T.Y. ; Ko, P.K. ; Hu, C.
Author_Institution :
University of California, Berkeley, CA
Volume :
6
Issue :
10
fYear :
1985
fDate :
10/1/1985 12:00:00 AM
Firstpage :
551
Lastpage :
553
Abstract :
It has been shown previously that the maximum channel electric field Em in a MOSFET is the most important parameter relating to all hot-electron effects and that Em can be represented as ( 
, where 
may be regarded as the effective length of the velocity-saturation region. The dependence of l on device geometries and process parameters is investigated in this letter. From both experiment and two-dimensional (2-D) simulation, it is found that Em has a form of ( 
. Channel length affects the saturation voltage, thus influencing the maximum channel electric field. The scaling of oxide thickness and junction depth, however, often has even greater effects on channel field. This semiempirical model of Em agrees with Em deduced from ISUB within about 5 percent; it can predict ISUB , which has been empirically correlated with hot-electron degradations.
, where may be regarded as the effective length of the velocity-saturation region. The dependence of l on device geometries and process parameters is investigated in this letter. From both experiment and two-dimensional (2-D) simulation, it is found that E . Channel length affects the saturation voltage, thus influencing the maximum channel electric field. The scaling of oxide thickness and junction depth, however, often has even greater effects on channel field. This semiempirical model of EKeywords :
Degradation; Equations; Geometry; Helium; Intrusion detection; MOSFET circuits; Parameter estimation; Predictive models; Two dimensional displays; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26226
Filename :
1485379
Link To Document :
