DocumentCode :
1106356
Title :
Formation of TiN/TiSi2 /p+-Si/n-Si by rapid thermal annealing (RTA) silicon implanted with boron through titanium
Author :
Delfino, M. ; Broadbent, E.K. ; Morgan, A.E. ; Burrow, B.J. ; Norcott, M.H.
Author_Institution :
Philips Research Laboratories, Sunnyvale, CA
Volume :
6
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
591
Lastpage :
593
Abstract :
A low temperature method of fabricating conductive (3.5 Ω/ sq.) p+/n junction diodes possessing excellent 
characteristics with reverse-bias leakage less than -3 nA.cm-2at -5 V is described. Single crystal n-type 〈100〉 Si is implanted with 60 keV11B+ through 0.028-µm thick sputtered Ti film. Rapid thermal annealing (RTA) in an N2 ambient simultaneously forms a 0.36-µm deep p+/n junction and a 0.063-µm thick bilayer of TiN and TiSi2 with a resistivity of 22 µΩ.cm. The electrical properties of these diodes are not degraded by annealing for 30 min at 500°C, suggesting that the outer layer of TiN is an effective diffusion barrier between TiSi2 and Al.
characteristics with reverse-bias leakage less than -3 nA.cm-2at -5 V is described. Single crystal n-type 〈100〉 Si is implanted with 60 keV11BKeywords :
Boron; Diodes; Etching; Rapid thermal annealing; Silicides; Silicon; Temperature; Thermal conductivity; Tin; Titanium;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26241
Filename :
1485394
Link To Document :
