Theoretical and experimental analysis of a—Si:H logic circuits

Expressions of the static behavior of a-Si-H TFT´s previously established in our laboratory are used in order to calculate the theoretical transfer characteristics of enhanced/enhanced (E/E) inverters. These characteristics are shown to be strongly influenced by the parameters of the band-tail distribution of localized states (especially its critical temperature Tc), and consequently by the quality of the semiconductor thin film. Several experimental results are presented to confirm the obtained expressions.