DocumentCode
1106400
Title
Theoretical and experimental analysis of a—Si:H logic circuits
Author
Leroux, T. ; Truche, R. ; Chenevas-Paule, A.
Author_Institution
LETI/IRDI, Grenoble Cedex, France
Volume
6
Issue
11
fYear
1985
fDate
11/1/1985 12:00:00 AM
Firstpage
604
Lastpage
605
Abstract
Expressions of the static behavior of a-Si-H TFT´s previously established in our laboratory are used in order to calculate the theoretical transfer characteristics of enhanced/enhanced (E/E) inverters. These characteristics are shown to be strongly influenced by the parameters of the band-tail distribution of localized states (especially its critical temperature Tc ), and consequently by the quality of the semiconductor thin film. Several experimental results are presented to confirm the obtained expressions.
Keywords
Amorphous silicon; Driver circuits; Inverters; Laboratories; Liquid crystal displays; Logic circuits; Temperature dependence; Temperature distribution; Thin film transistors; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26246
Filename
1485399
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