Monolithic GaInNAsSb/GaAs VECSEL Operating at 1550 nm

Author

Korpijarvi, Ville-Markus ; Kantola, Emmi L. ; Leinonen, Tomi ; Isoaho, Riku ; Guina, Mircea

Author_Institution

Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland

Volume

21

Issue

6

fYear

2015

fDate

Nov.-Dec. 2015

Firstpage

1

Lastpage

5

Abstract

The first monolithic GaAs-based vertical-external-cavity surface-emitting laser (VECSEL) operating at 1550 nm is reported. The VECSEL operation is based on a gain mirror which was grown in a single growth run by plasma-assisted molecular beam epitaxy. The gain mirror comprised eight GaInNAsSb/GaAs quantum wells with a photoluminescence peak at 1505 nm and an AlAs/GaAs distributed Bragg reflector ensuring high reflectivity. The VECSEL chip was pumped with an 808-nm diode laser that had a large quantum defect in respect to the lasing wavelength. An output power of 80 mW in continuous wave mode and 210 mW in pulsed pump mode are demonstrated close to room temperature.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser cavity resonators; laser mirrors; laser modes; molecular beam epitaxial growth; optical pumping; photoluminescence; plasma deposition; quantum well lasers; reflectivity; surface emitting lasers; GaInNAsSb-GaAs-AlAs-GaAs; VECSEL chip; continuous wave mode; diode laser; distributed Bragg reflector; gain mirror; lasing wavelength; monolithic GaAs-based vertical-external-cavity surface-emitting laser; monolithic VECSEL; output power; photoluminescence; plasma-assisted molecular beam epitaxy; power 210 mW; power 80 mW; pulsed pump mode; quantum defect; quantum wells; reflectivity; wavelength 1550 nm; wavelength 808 nm; Gallium arsenide; Mirrors; Optical surface waves; Pump lasers; Vertical cavity surface emitting lasers; GaInNAsSb; GaInNAsSb,; gallium arsenide; quantum well lasers; semiconductor disk lasers; semiconductor lasers; surface emitting lasers; vertical-external-cavity surface-emitting lasers; vertical-external-cavity surface-emitting lasers (VECSELs);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2015.2415200

Filename

7064725