DocumentCode :
1106523
Title :
First life-test results on planar p-i-n InGaAs/InP photodiodes passivated with SiO2or SiNx+SiO2or SiNxlayers
Author :
Ripoche, G. ; Decor, Ph. ; Blanjot, C. ; Bourdon, B. ; Salsac, P. ; Duda, E.
Author_Institution :
Centre de Recherches de la Compagnie Générale d´´Electricite, Marcoussis, France
Volume :
6
Issue :
12
fYear :
1985
fDate :
12/1/1985 12:00:00 AM
Firstpage :
631
Lastpage :
633
Abstract :
This letter reports the results obtained with planar p-in photodiodes realized using three different passivating coatings and compares their performances and long-term stability in view of highly reliable component development.
Keywords :
Cleaning; Dark current; Detectors; Indium gallium arsenide; Indium phosphide; Life testing; PIN photodiodes; Passivation; Silicon compounds; Temperature sensors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26256
Filename :
1485409
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1106523
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