Band-to-band Auger processes in 1.3 µm InGaAsP semiconductor lasers

Within the context of the four-band Kane model, we have analyzed the contributions of pure collision and phonon-assisted CHSH and CHCC Auger processes to the nonradiative recombination lifetime in highly excited InGaAsP. Our method incorporates refined expressions for the wavefunction overlap integrals and spectral density functions, and avoids approximations to Fermi and phase-space factors. Our results are in good agreement with recent experiments, despite a rather large uncertainty associated with the unavailability of precise values for certain band-structure parameters.