DocumentCode :
1106545
Title :
Locking range and stability of injection locked 1.54 µm InGaAsp semiconductor lasers
Author :
Henry, C.H. ; Olsson, N.A. ; Dutta, N.K.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ, USA
Volume :
21
Issue :
8
fYear :
1985
fDate :
8/1/1985 12:00:00 AM
Firstpage :
1152
Lastpage :
1156
Abstract :
Measurements of the intensity of an injection locked 1.54 μm InGaAsP laser are reported. The change in intensity of the locked laser across the locking range is quite asymmetric, with a shape that agrees well with the theory of Lang. A linewidth parameter of \\alpha = 6 \\pm 1 was determined from the magnitude of the locking range. The injection locked laser was found to be unstable on the high frequency end of the locking range. The physical origin of this instability is explained in terms of a laser intensity change altering the phase of the laser field relative to that of the injected field.
Keywords :
Gallium materials/devices; Injection-locked oscillators; Laser stability; Laser stability; Laser transitions; Laser tuning; Master-slave; Oscilloscopes; Power lasers; Resonance; Resonant frequency; Semiconductor lasers; Temperature;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1985.1072787
Filename :
1072787
Link To Document :
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