• DocumentCode
    1106545
  • Title

    Locking range and stability of injection locked 1.54 µm InGaAsp semiconductor lasers

  • Author

    Henry, C.H. ; Olsson, N.A. ; Dutta, N.K.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, NJ, USA
  • Volume
    21
  • Issue
    8
  • fYear
    1985
  • fDate
    8/1/1985 12:00:00 AM
  • Firstpage
    1152
  • Lastpage
    1156
  • Abstract
    Measurements of the intensity of an injection locked 1.54 μm InGaAsP laser are reported. The change in intensity of the locked laser across the locking range is quite asymmetric, with a shape that agrees well with the theory of Lang. A linewidth parameter of \\alpha = 6 \\pm 1 was determined from the magnitude of the locking range. The injection locked laser was found to be unstable on the high frequency end of the locking range. The physical origin of this instability is explained in terms of a laser intensity change altering the phase of the laser field relative to that of the injected field.
  • Keywords
    Gallium materials/devices; Injection-locked oscillators; Laser stability; Laser stability; Laser transitions; Laser tuning; Master-slave; Oscilloscopes; Power lasers; Resonance; Resonant frequency; Semiconductor lasers; Temperature;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1985.1072787
  • Filename
    1072787