DocumentCode
1106545
Title
Locking range and stability of injection locked 1.54 µm InGaAsp semiconductor lasers
Author
Henry, C.H. ; Olsson, N.A. ; Dutta, N.K.
Author_Institution
AT&T Bell Laboratories, Murray Hill, NJ, USA
Volume
21
Issue
8
fYear
1985
fDate
8/1/1985 12:00:00 AM
Firstpage
1152
Lastpage
1156
Abstract
Measurements of the intensity of an injection locked 1.54 μm InGaAsP laser are reported. The change in intensity of the locked laser across the locking range is quite asymmetric, with a shape that agrees well with the theory of Lang. A linewidth parameter of
was determined from the magnitude of the locking range. The injection locked laser was found to be unstable on the high frequency end of the locking range. The physical origin of this instability is explained in terms of a laser intensity change altering the phase of the laser field relative to that of the injected field.
was determined from the magnitude of the locking range. The injection locked laser was found to be unstable on the high frequency end of the locking range. The physical origin of this instability is explained in terms of a laser intensity change altering the phase of the laser field relative to that of the injected field.Keywords
Gallium materials/devices; Injection-locked oscillators; Laser stability; Laser stability; Laser transitions; Laser tuning; Master-slave; Oscilloscopes; Power lasers; Resonance; Resonant frequency; Semiconductor lasers; Temperature;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1985.1072787
Filename
1072787
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