Title :
A In0.53Ga0.47As-In0.52Al0.48As single quantum well field-effect transistor
Author :
Seo, K.S. ; Bhattacharya, Pallab K. ; Nashimoto, Y. ; Nashimoto, Y.
Author_Institution :
University of Michigan, Ann Arbor, MI
fDate :
12/1/1985 12:00:00 AM
Abstract :
This letter reports the materials characteristics and device performance of a In0.53Ga0.47As-In0.52Al0.48As single quantum well (SQW) field-effect transistor grown by molecular beam epitaxy on
Keywords :
Dielectric substrates; Epitaxial layers; FETs; Indium compounds; Indium gallium arsenide; Indium phosphide; MISFETs; Molecular beam epitaxial growth; Temperature measurement; Wavelength measurement;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26260
