DocumentCode :
1106573
Title :
A In0.53Ga0.47As-In0.52Al0.48As single quantum well field-effect transistor
Author :
Seo, K.S. ; Bhattacharya, Pallab K. ; Nashimoto, Y. ; Nashimoto, Y.
Author_Institution :
University of Michigan, Ann Arbor, MI
Volume :
6
Issue :
12
fYear :
1985
fDate :
12/1/1985 12:00:00 AM
Firstpage :
642
Lastpage :
644
Abstract :
This letter reports the materials characteristics and device performance of a In0.53Ga0.47As-In0.52Al0.48As single quantum well (SQW) field-effect transistor grown by molecular beam epitaxy on
Keywords :
Dielectric substrates; Epitaxial layers; FETs; Indium compounds; Indium gallium arsenide; Indium phosphide; MISFETs; Molecular beam epitaxial growth; Temperature measurement; Wavelength measurement;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26260
Filename :
1485413
Link To Document :
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