DocumentCode
1106635
Title
High-speed low-power circuits fabricated using a submicron NMOS technology
Author
Fichtner, Wolfgang ; Hofstatter, E.A. ; Watts, R.K. ; Bayruns, Robert J. ; Bechtold, P.F. ; Johnston, R.L. ; Boulin, D.M.
Author_Institution
AT&T Bell Laboratories, Murray Hill, NJ
Volume
6
Issue
12
fYear
1985
fDate
12/1/1985 12:00:00 AM
Firstpage
662
Lastpage
664
Abstract
We present results on very high-speed low-power devices and circuits fabricated using a NMOS technology scaled to submicron dimensions. These results illustrate the electrical behavior of single minimum-size devices, and present the performance of several submicron circuits, such as ring oscillators, a 3-GHz divide-by-two counter and a 90- MHz 16 × 16 multiplier.
Keywords
Counting circuits; Degradation; Hot carriers; Implants; MOS devices; Power dissipation; Power generation; Power supplies; Ring oscillators; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26266
Filename
1485419
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