• DocumentCode
    1106662
  • Title

    A seeded-channel silicon-on-insulator (SOI) MOS technology

  • Author

    Baerg, W. ; Sturm, James C. ; Hwa, T.L. ; Lin, H.Y. ; Siu, B.B. ; Ting, C.H. ; Tzeng, J.C. ; Gibbons, J.F.

  • Author_Institution
    Intel Corporation, Santa Clara, CA
  • Volume
    6
  • Issue
    12
  • fYear
    1985
  • fDate
    12/1/1985 12:00:00 AM
  • Firstpage
    668
  • Lastpage
    670
  • Abstract
    An improved silicon-on-insulator (SOI) MOSFET transistor structure is presented. The structure retains the density and low-capacitance advantages of SOI, but places the transistor channel region in the single-crystal silicon substrate. This "seeded-channel" configuration avoids floating-body effects and ensures that defects in the SOI will not affect the channel mobility. The technology has been used to successfully fabricate n-channel transistors.
  • Keywords
    CMOS technology; Capacitance; Degradation; Epitaxial growth; Inverters; MOSFET circuits; Molecular beam epitaxial growth; Silicon on insulator technology; Space technology; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26268
  • Filename
    1485421
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1106662