Title :
Low-Power Widely Tunable Gm-C Filter Employing an Adaptive DC-blocking, Triode-Biased MOSFET Transconductor
Author :
Hori, Satoshi ; Matsuno, Noriaki ; Maeda, T. ; Hida, Hirotaka
Author_Institution :
Green Platform Res. Labs., NEC Corp., Kawasaki, Japan
Abstract :
We propose a transconductor capable of providing a wide continuous-tuning-range filter applicable to Bluetooth, W-CDMA, LTE, and IEEE 802.11a/b/g W-LANs without sacrificing power consumption or die area. The wide tuning range is achieved without the need for any array configuration, using triode-biased input MOSFETs with transconductance that is widely tunable by means of drain bias adjustment. The transconductor also uses an adaptive DC-blocking circuit that suppresses bias current in a high transconductance mode, which results in minimizing transconductor power consumption.A 4th-order Butterworth low-pass filter using this transconductor, fabricated in a 0.18-μm CMOS process, exhibits a cut-off frequency tuning range of 0.3-12 MHz with a current consumption of 0.6-2.6 mA. The die area is small: 0.125 mm2.
Keywords :
Butterworth filters; CMOS integrated circuits; MOSFET; circuit tuning; low-pass filters; low-power electronics; 4th-order Butterworth low-pass filter; Bluetooth; CMOS process; IEEE 802.11a/b/g W-LAN; LTE; W-CDMA; adaptive DC-blocking circuit; bias current suppression; continuous-tuning-range filter; current 0.6 mA to 2.6 mA; cut-off frequency tuning range; die area; drain bias adjustment; frequency 0.3 MHz to 12 MHz; low-power widely tunable Gm-C filter; size 0.18 mum; transconductance mode; transconductor power consumption; triode-biased MOSFET transconductor; wide tuning range; Active filters; CMOS integrated circuits; transconductor; wireless LAN;
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
DOI :
10.1109/TCSI.2013.2268291