Fabrication of an Electrically Pumped Lead-Chalcogenide Midinfrared Laser on a [110] Oriented PbSnSe Substrate

Author

Mukherjee, S. ; Li, D. ; Ray, D. ; Zhao, F. ; Elizondo, S.L. ; Jain, S. ; Ma, J. ; Shi, Z.

Author_Institution

Univ. of Oklahoma, Norman

Volume

20

Issue

8

fYear

2008

fDate

4/15/2008 12:00:00 AM

Firstpage

629

Lastpage

631

Abstract

The fabrication of an electrically pumped lead salt- based edge-emitting laser on a polished [110]-oriented PbSnSe substrate is presented. The laser structure was grown by molecular beam epitaxy and consisted of a PbSrSe-PbSe multiple quantum- well active region sandwiched between PbSrSe confinement layers. Pulsed laser emission was observed at lambda = 5.2 mum wavelength up to 158 K with a maximum of 40% duty cycle of current pumping. The repeatability in continuous lasing emission power was also examined.

Keywords

lead compounds; molecular beam epitaxial growth; optical pumping; quantum well lasers; surface emitting lasers; PbSnSe; PbSrSe confinement layers; PbSrSe-PbSe; PbSrSe-PbSe multiple quantum-well; [110] oriented PbSnSe substrate; continuous lasing emission power; edge-emitting laser; electrically pumped lead-chalcogenide midinfrared laser; laser structure; molecular beam epitaxy; pulsed laser emission; wavelength 5.2 mum; Chemical lasers; Gas lasers; Laser excitation; Laser tuning; Lead; Molecular beam epitaxial growth; Optical device fabrication; Pump lasers; Semiconductor lasers; Substrates; Lead salts; [110] PbSnSe substrate; midinfrared (MIR) electrically pumped laser;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.918918

Filename

4475234