DocumentCode :
1106822
Title :
Multidimensional Modeling of Nanotransistors
Author :
Anantram, M.P. ; Svizhenko, A.
Author_Institution :
Univ. of Waterloo, Waterloo
Volume :
54
Issue :
9
fYear :
2007
Firstpage :
2100
Lastpage :
2115
Abstract :
In this paper, we review our recent work using the nonequilibrium Green´s function method to model nanotransistors. After presenting a motivation for the need of quantum mechanical modeling, an account of the equations and implementation is given for both 1-D and 2-D modeling. Examples are given to highlight the use of the developed models. Finally, possible future directions in quantum mechanical modeling of transport in nanotransistors are highlighted along with computational challenges.
Keywords :
Green´s function methods; nanoelectronics; transistors; nanotransistors; nonequilibrium Green function method; quantum mechanical modeling; Equations; Impurities; Light scattering; MOSFETs; Multidimensional systems; Particle scattering; Quantum computing; Quantum mechanics; Silicon; Tunneling; Algorithm; Green´s function; MOSFETs; computational electronics; contact resistance; gate leakage; modeling; nanoelectronics; nanomaterials; nanotechnology; non equilibrium quantum transport; parallel processing; phonons; quantum effects; quantum theory; review; scattering; semiconductors; silicon; simulator; software;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2007.902857
Filename :
4294179
Link To Document :
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