Multidimensional Modeling of Nanotransistors

Author

Anantram, M.P. ; Svizhenko, A.

Author_Institution

Univ. of Waterloo, Waterloo

Volume

54

Issue

9

fYear

2007

Firstpage

2100

Lastpage

2115

Abstract

In this paper, we review our recent work using the nonequilibrium Green´s function method to model nanotransistors. After presenting a motivation for the need of quantum mechanical modeling, an account of the equations and implementation is given for both 1-D and 2-D modeling. Examples are given to highlight the use of the developed models. Finally, possible future directions in quantum mechanical modeling of transport in nanotransistors are highlighted along with computational challenges.

Keywords

Green´s function methods; nanoelectronics; transistors; nanotransistors; nonequilibrium Green function method; quantum mechanical modeling; Equations; Impurities; Light scattering; MOSFETs; Multidimensional systems; Particle scattering; Quantum computing; Quantum mechanics; Silicon; Tunneling; Algorithm; Green´s function; MOSFETs; computational electronics; contact resistance; gate leakage; modeling; nanoelectronics; nanomaterials; nanotechnology; non equilibrium quantum transport; parallel processing; phonons; quantum effects; quantum theory; review; scattering; semiconductors; silicon; simulator; software;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.902857

Filename

4294179