Title :
A Comparison of Test and Model-Predicted RF-Pulse Susceptibilities of UHF Transistors
Author :
Lange, Thomas J. ; Hjellen, Gregory A.
Author_Institution :
Boeing Aerospace Company, P. O. Box 3999, Seattle, WA 98124. (206) 655-9282
Abstract :
A semiconductor thermal-damage model was presented previously. Accuracy verification was limited to dc pulses and a damped sinusoidal waveform. Data published on UHF transistors allow additional model verification to RF pulses. 1 Results confirm that dc-pulse data are sufficient to predict RF-pulse damage levels.
Keywords :
Circuit simulation; Computational modeling; Field-flow fractionation; Predictive models; Pulse modulation; Radio frequency; Temperature; Testing; Time division multiplexing; Voltage; RF-pulse susceptibilities; UHF transistors; comparison of model predictions with experiment;
Journal_Title :
Electromagnetic Compatibility, IEEE Transactions on
DOI :
10.1109/TEMC.1978.303631
