DocumentCode :
1106838
Title :
An approach toward 20-percent-efficient silicon solar cells
Author :
Rohatgi, Ajeet ; Rai-Choudhury, P.
Author_Institution :
Georgia Institute of Technology, Atlanta, GA
Volume :
33
Issue :
1
fYear :
1986
fDate :
1/1/1986 12:00:00 AM
Firstpage :
1
Lastpage :
7
Abstract :
This paper shows that oxide surface passivation coupled with optimum multilayer antireflective coating can provide ∼3 percent (absolute) improvement in solar cell efficiency. Use of single-layer AR coating, without passivation, gives cell efficiencies in the range of 15- 15.5 percent on high-quality 4-Ω . cm as well as 0.1-0.2-Ω . cm float-zone silicon. Oxide surface passivation alone raises the cell efficiency to ≥ 17 percent. An optimum double-layer AR coating on oxide-passivated cells provides an additional ∼5-10 percent improvement over a single-layer AR-coated cell, resulting in cell efficiencies in excess of 18 percent. Experimentally observed improvements are supported by model calculations, and an approach to ≥20 percent efficient cells is discussed.
Keywords :
Coatings; Doping; Nonhomogeneous media; Passivation; Photonic band gap; Photovoltaic cells; Research and development; Semiconductor process modeling; Silicon; Spontaneous emission;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22428
Filename :
1485645
Link To Document :
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