• DocumentCode
    1106856
  • Title

    A Pseudo Two-Dimensional Subthreshold Surface Potential Model for Dual-Material Gate MOSFETs

  • Author

    Baishya, S. ; Mallik, A. ; Sarkar, C.K.

  • Author_Institution
    Nat. Inst. of Technol., Silchar
  • Volume
    54
  • Issue
    9
  • fYear
    2007
  • Firstpage
    2520
  • Lastpage
    2525
  • Abstract
    An analytical subthreshold surface potential model for dual-material gate MOSFETs, which considers a varying depth of the channel depletion layer due to the difference in Hatband voltages, and also due to the depletion layers around the source/drain junctions, is presented. The model predictions are compared with the predictions by the 2-D numerical device simulator DESSIS, and a very good agreement between the two is observed.
  • Keywords
    MOSFET; surface potential; DESSIS; channel depletion layer; dual-material gate MOSFET; flatband voltages; pseudo two-dimensional subthreshold surface potential model; source-drain junctions; CMOS logic circuits; CMOS technology; Circuit simulation; Degradation; Dynamic voltage scaling; Logic circuits; MOSFETs; Numerical simulation; Predictive models; Subthreshold current; Depletion layer depth; dual-material gate (DMG)-MOSFETs; gate material work function difference; subthreshold surface potential;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2007.903204
  • Filename
    4294182
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1106856