• DocumentCode
    1106858
  • Title

    Measurement of low resistive ohmic contacts on semiconductors

  • Author

    Woelk, Egbert G. ; Krautle, Herbert ; Beneking, Heinz

  • Author_Institution
    Technical University Aachen, Aachen, Germany
  • Volume
    33
  • Issue
    1
  • fYear
    1986
  • fDate
    1/1/1986 12:00:00 AM
  • Firstpage
    19
  • Lastpage
    22
  • Abstract
    Macroscopic analog models of planar contacts to semiconductor layers were made and equipotential lines underneath the contact were traced. Voltage drop and current density across the interfacial layer of such contacts were determined and compared to theoretically calculated values. The extended transmission line model (TLM) is used to describe the measurements and a reasonable limit for its application to the measurement of ρcis \\rho_{c}/(\\rho_{s} . h) > 0.2 ; for \\rho_{c}/(\\rho_{s} . h) \\le 0.2 the model of Overmeyer appears to be applicable.
  • Keywords
    Conductivity; Contact resistance; Current density; Electrical resistance measurement; Ohmic contacts; Planar transmission lines; Semiconductor materials; Transmission line measurements; Transmission line theory; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22430
  • Filename
    1485647
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1106858