DocumentCode
1106893
Title
nextnano: General Purpose 3-D Simulations
Author
Birner, Stefan ; Zibold, Tobias ; Andlauer, Till ; Kubis, Tillmann ; Sabathil, Matthias ; Trellakis, Alex ; Vogl, Peter
Author_Institution
Tech. Univ. of Munich, Garching
Volume
54
Issue
9
fYear
2007
Firstpage
2137
Lastpage
2142
Abstract
nextnano is a semiconductor nanodevice simulation tool that has been developed for predicting and understanding a wide range of electronic and optical properties of semiconductor nanostructures. The underlying idea is to provide a robust and generic framework for modeling device applications in the field of nanosized semiconductor heterostructures. The simulator deals with realistic geometries and almost any relevant combination of materials in one, two, and three spatial dimensions. It focuses on an accurate and reliable treatment of quantum mechanical effects and provides a self-consistent solution of the Schrodinger, Poisson, and current equations. Exchange-correlation effects are taken into account in terms of the local density scheme. The electronic structure is represented within the single-band or multiband kldrp envelope function approximation, including strain. The code is not intended to be a ldquoblack boxrdquo tool. It requires a good understanding of quantum mechanics. The input language provides a number of tools that simplify setting up device geometry or running repetitive tasks. In this paper, we present a brief overview of nextnano and present four examples that demonstrate the wide range of possible applications for this software in the fields of solid-state quantum computation, nanoelectronics, and optoelectronics, namely, 1) a realization of a qubit based on coupled quantum wires in a magnetic field, 2) and 3) carrier transport in two different nano-MOSFET devices, and 4) a quantum cascade laser.
Keywords
Poisson equation; Schrodinger equation; electronic engineering computing; nanoelectronics; nanostructured materials; quantum computing; semiconductor process modelling; semiconductor quantum wires; Poisson equation; Schrodinger equation; electronic structure; exchange-correlation effect; nanoelectronics; nanosized semiconductor heterostructure; nextnano; optoelectronics; quantum mechanical effect; semiconductor nanodevice simulation; solid-state quantum computation; Geometrical optics; Nanoscale devices; Nanostructured materials; Predictive models; Quantum cascade lasers; Quantum computing; Quantum mechanics; Robustness; Semiconductor nanostructures; Solid modeling; Carrier transport; electronic structure; magnetic field; quantum; quantum wire; simulation; technology computer-aided design (TCAD);
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2007.902871
Filename
4294186
Link To Document