DocumentCode :
1106912
Title :
On the parasitic capacitances of multilevel skewed metallization lines
Author :
Taylor, Clayborne D. ; Elkhouri, George N. ; Wade, Thomas E.
Author_Institution :
Mississippi State University, Mississippi State, MS
Volume :
33
Issue :
1
fYear :
1986
fDate :
1/1/1986 12:00:00 AM
Firstpage :
41
Lastpage :
46
Abstract :
Using the method of moments solution technique, the charge distributions induced on skewed metallization lines are obtained. The capacitance between the lines is obtained for typical cross-over configurations. Additionally, end effects are considered in detail.
Keywords :
Conductors; Dielectrics; Hydrogen; Integral equations; Metallization; Microelectronics; Moment methods; Parasitic capacitance; Permittivity;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22434
Filename :
1485651
Link To Document :
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