DocumentCode
1106912
Title
On the parasitic capacitances of multilevel skewed metallization lines
Author
Taylor, Clayborne D. ; Elkhouri, George N. ; Wade, Thomas E.
Author_Institution
Mississippi State University, Mississippi State, MS
Volume
33
Issue
1
fYear
1986
fDate
1/1/1986 12:00:00 AM
Firstpage
41
Lastpage
46
Abstract
Using the method of moments solution technique, the charge distributions induced on skewed metallization lines are obtained. The capacitance between the lines is obtained for typical cross-over configurations. Additionally, end effects are considered in detail.
Keywords
Conductors; Dielectrics; Hydrogen; Integral equations; Metallization; Microelectronics; Moment methods; Parasitic capacitance; Permittivity;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22434
Filename
1485651
Link To Document