DocumentCode
110692
Title
Analytical Modeling and Experimental Validation of Threshold Voltage in BSIM6 MOSFET Model
Author
Agarwal, Harshit ; Gupta, Chetan ; Kushwaha, Pragya ; Yadav, Chandan ; Duarte, Juan P. ; Khandelwal, Sourabh ; Chenming Hu ; Chauhan, Yogesh S.
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur, India
Volume
3
Issue
3
fYear
2015
fDate
May-15
Firstpage
240
Lastpage
243
Abstract
In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel effects, and is intended to be used in commercial SPICE simulators for operating point information. The model is validated with measurement data from IBM 90-nm technology node using various popular threshold voltage extraction techniques, and good agreement is obtained.
Keywords
MOSFET; semiconductor device models; BSIM6 MOSFET model; IBM technology; SPICE simulators; physical charge-based core; short channel effects; size 90 nm; threshold voltage extraction technique; Analytical models; Electric potential; Logic gates; MOSFET; Semiconductor device modeling; Semiconductor process modeling; Threshold voltage; BSIM6; MOSFET; SPICE; threshold voltage;
fLanguage
English
Journal_Title
Electron Devices Society, IEEE Journal of the
Publisher
ieee
ISSN
2168-6734
Type
jour
DOI
10.1109/JEDS.2015.2415584
Filename
7064732
Link To Document