Title :
Analytical Modeling and Experimental Validation of Threshold Voltage in BSIM6 MOSFET Model
Author :
Agarwal, Harshit ; Gupta, Chetan ; Kushwaha, Pragya ; Yadav, Chandan ; Duarte, Juan P. ; Khandelwal, Sourabh ; Chenming Hu ; Chauhan, Yogesh S.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur, India
Abstract :
In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel effects, and is intended to be used in commercial SPICE simulators for operating point information. The model is validated with measurement data from IBM 90-nm technology node using various popular threshold voltage extraction techniques, and good agreement is obtained.
Keywords :
MOSFET; semiconductor device models; BSIM6 MOSFET model; IBM technology; SPICE simulators; physical charge-based core; short channel effects; size 90 nm; threshold voltage extraction technique; Analytical models; Electric potential; Logic gates; MOSFET; Semiconductor device modeling; Semiconductor process modeling; Threshold voltage; BSIM6; MOSFET; SPICE; threshold voltage;
Journal_Title :
Electron Devices Society, IEEE Journal of the
DOI :
10.1109/JEDS.2015.2415584
