• DocumentCode
    1106921
  • Title

    A comparison of active and passive optical bistability in semiconductors

  • Author

    Adams, M.J. ; Westlake, H.J. ; O´Mahony, M.J. ; Henning, I.D.

  • Author_Institution
    British Telecom Research Laboratories, Martlesham Heath, Ipswich, England
  • Volume
    21
  • Issue
    9
  • fYear
    1985
  • fDate
    9/1/1985 12:00:00 AM
  • Firstpage
    1498
  • Lastpage
    1504
  • Abstract
    A comparison is presented between optical bistability in laser amplifiers and in passive Fabry-Perot cavities. The basis for comparison is afforded by a new analysis of optical amplifiers which encompasses the cases of passive refractive and absorptive bistability as special limiting cases. The results indicate that amplifiers have advantages of lower input intensity requirements (by a factor of 103) and reduced sensitivity to wavelength by comparison with passive cavities; experimental results indicate an input power of -30 dBm is required for active bistability. Facet coating requirements for active and passive optimum configurations are also discussed.
  • Keywords
    Bistability, optical; Fabry - Perot resonators; Laser amplifiers; Optical bistability; Gallium arsenide; Nonlinear optics; Optical amplifiers; Optical bistability; Optical refraction; Optical sensors; Optical superlattices; Power amplifiers; Semiconductor optical amplifiers; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1985.1072818
  • Filename
    1072818