Title :
The noise properties of high electron mobility transistors
Author_Institution :
University of Manchester, Macclesfield, Cheshire, United Kingdom
fDate :
1/1/1986 12:00:00 AM
Abstract :
A simple analytic model for the HEMT, based on the Pucel theory for MESFET´s, is developed which can be used to calculate the noise properties of the transistor. Good agreement between calculation and experiment is found. The dependence of noise temperature on gate length and channel thickness is presented.
Keywords :
Electrons; Equations; HEMTs; MESFETs; MODFETs; Microwave transistors; Observatories; Radio astronomy; Temperature dependence; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22436
