• DocumentCode
    1106930
  • Title

    The noise properties of high electron mobility transistors

  • Author

    Brookes, Tom M.

  • Author_Institution
    University of Manchester, Macclesfield, Cheshire, United Kingdom
  • Volume
    33
  • Issue
    1
  • fYear
    1986
  • fDate
    1/1/1986 12:00:00 AM
  • Firstpage
    52
  • Lastpage
    57
  • Abstract
    A simple analytic model for the HEMT, based on the Pucel theory for MESFET´s, is developed which can be used to calculate the noise properties of the transistor. Good agreement between calculation and experiment is found. The dependence of noise temperature on gate length and channel thickness is presented.
  • Keywords
    Electrons; Equations; HEMTs; MESFETs; MODFETs; Microwave transistors; Observatories; Radio astronomy; Temperature dependence; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22436
  • Filename
    1485653
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1106930