Title :
Vertically Stacked Carbon Nanotube-Based Interconnects for Through Silicon Via Application
Author :
Di Jiang ; Wei Mu ; Si Chen ; Yifeng Fu ; Jeppson, Kjell ; Liu, Johan
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenburg, Sweden
Abstract :
Stacking of silicon chips with carbon nanotube (CNT)-based through-silicon vias (TSVs) is experimentally demonstrated. Polymer filling is used to improve the transfer quality of CNTs into pre-etched silicon holes. Special hexagonal CNTs are designed to achieve high aspect ratio (10:1) CNT vias. TSVs filled with closely packed CNTs show a highly linear dc I-V response. The proposed process works at room temperature, which makes it compatible with existing device fabrication flow.
Keywords :
carbon nanotubes; integrated circuit interconnections; three-dimensional integrated circuits; CNT; TSV; device fabrication flow; linear dc I-V response; polymer filling; pre-etched silicon holes; silicon chips; temperature 293 K to 298 K; through silicon via application; transfer quality; vertically stacked carbon nanotube-based interconnects; Arrays; Carbon nanotubes; Fabrication; Polymers; Resistance; Silicon; Through-silicon vias; 3D Stacking; 3D stacking; Carbon Nanotube (CNT); Carbon nanotube (CNT); Densification; Interconnect; Through-silicon via (TSV); Transfer; densification; interconnect; through-silicon via (TSV); transfer;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2415198
