Title :
A GaAs 16-kbit static RAM using dislocation-free crystal
Author :
Hirayama, Masahiro ; Togashi, Minoru ; Kato, Naoki ; Suzuki, Masamitsu ; Matsuoka, Yutaka ; Kawasaki, Yasuhiro
Author_Institution :
Nippon Telegraph and Telephone Corporation, Atsugi-shi, Kanagawa, Japan
fDate :
1/1/1986 12:00:00 AM
Abstract :
A GaAs 16-kbit static RAM was developed using high-density integration technology and high-uniformity crystal. Highly integrated SAINT FET´s with 1.0-µm gate length and 1.5-µm interconnection lines were formed by self-alignment and fine photolithography. Highly uniform crystal with less than 20-mV threshold scattering was obtained from an In-doped dislocation-free LEC with a 2-in diameter. An address access time of 4.1 ns was obtained with an associated power dissipation of 1.46 W.
Keywords :
Circuit synthesis; Delay effects; Etching; FETs; Gallium arsenide; Integrated circuit interconnections; Large scale integration; Random access memory; Read-write memory; Scattering;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22445
