Numerical analysis of switching characteristics in SOI MOSFET´s

The paper presents an analysis of switching characteristics in SOI MOSFET´s. By using a two-carrier and two-dimensional transient SOI simulator, calculated waveforms having good agreement with experimental results are obtained. Further analysis revealed the mechanism of switching characteristics. The motion of majority carriers features the switching characteristics for SOI devices in both turn-on and turn-off stages, although the current overshooting time and the substrate potential recovery time are strongly affected by bias conditions. The magnitude of drain current overshoot in the turn-on stage also proved to be a function of substrate impurity concentration.