Title :
Elementary ambipolar field-effect transistor model
Author :
Pfleiderer, Hans
Author_Institution :
Siemens Research Laboratories, Munich, Federal Republic of Germany
fDate :
1/1/1986 12:00:00 AM
Abstract :
An ambipolar FET can be operated alternatively in n-channel and p-channel modes. A simple conceptual model is proposed. It considers ohmic source and drain contacts, a gradual channel, and the depletion approximation.
Keywords :
Amorphous silicon; Crystallization; FETs; Helium; Insulation; Ohmic contacts; Semiconductor films; Space charge; Thin film transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22451
