Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

Author

Kuzum, Duygu ; Krishnamohan, Tejas ; Pethe, Abhijit J. ; Okyay, Ali K. ; Oshima, Yasuhiro ; Sun, Yun ; McVittie, James P. ; Pianetta, Piero A. ; McIntyre, Paul C. ; Saraswat, Krishna C.

Author_Institution

Stanford Univ., Stanford

Volume

29

Issue

4

fYear

2008

fDate

4/1/2008 12:00:00 AM

Firstpage

328

Lastpage

330

Abstract

Passivation of Ge has been a critical issue for Ge MOS applications in future technology nodes. In this letter, we introduce ozone oxidation to engineer Ge/insulator interface. Density of interface states (D_it) across the bandgap and close to the conduction band edge was extracted using conductance technique at low temperatures. D_it dependence on growth conditions was studied. Minimum D_it of 3 times 10¹¹ cm^-2V^-1 was demonstrated. Physical quality of the interface was investigated through Ge 3d spectra measurements. We found that the interface and D_it are strongly affected by the distribution of oxidation states and the quality of the suboxide.

Keywords

CMOS integrated circuits; elemental semiconductors; germanium; oxidation; 3d spectra measurements; Ge; MOS applications; conductance technique; germanium-insulator interface; low interface-state density; ozone oxidation; Dielectric materials; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Interface states; Oxidation; Passivation; Photonic band gap; Sun; Temperature; Germanium; interface-state density extraction; oxide; surface passivation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.918272

Filename

4475271