DocumentCode :
1107140
Title :
Voltage-controlling mechanisms in low-resistivity silicon solar cells—A unified approach
Author :
Weizer, V.G. ; Swartz, C.K. ; Hart, R.E. ; Godlewski, M.P.
Author_Institution :
NASA Lewis Research Center, Cleveland, OH
Volume :
33
Issue :
1
fYear :
1986
fDate :
1/1/1986 12:00:00 AM
Firstpage :
156
Lastpage :
158
Abstract :
An experimental technique is used to determine the relative values of the base and emitter components of the dark saturation current of six types of high-voltage low-resistivity silicon solar cells. One of the suprising findings is the suggestion that the magnitude of the minority-carrier mobility may be process-dependent.
Keywords :
Electron mobility; Error analysis; Gallium arsenide; Numerical models; Photovoltaic cells; Quantum mechanics; Silicon; Statistics; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22454
Filename :
1485671
Link To Document :
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