Extraction of Substrate Resistance in Multifinger Bulk FinFETs Using Shorted Source/Drain Configuration

The substrate resistances of highly scaled bulk FinFETs were extracted by using a new RF equivalent circuit, and this approach was verified by a 3-D device simulator. Small signal model parameters of bulk FinFETs were extracted through proposed equivalent circuit and Y-parameter analysis. Unlike the conventional method, the proposed method showed frequency-independent substrate resistances in highly scaled devices. The extraction of the substrate resistances is investigated with number of finger, device geometry, and bias condition. Our approach was verified up to 50 GHz in devices operating in the saturation region.