Title :
Extraction of Substrate Resistance in Multifinger Bulk FinFETs Using Shorted Source/Drain Configuration
Author :
Jung, Jae-Hong ; Lee, Jong-Ho
Abstract :
The substrate resistances of highly scaled bulk FinFETs were extracted by using a new RF equivalent circuit, and this approach was verified by a 3-D device simulator. Small signal model parameters of bulk FinFETs were extracted through proposed equivalent circuit and Y-parameter analysis. Unlike the conventional method, the proposed method showed frequency-independent substrate resistances in highly scaled devices. The extraction of the substrate resistances is investigated with number of finger, device geometry, and bias condition. Our approach was verified up to 50 GHz in devices operating in the saturation region.
Keywords :
MOSFET; equivalent circuits; parameter estimation; semiconductor device models; substrates; 3D device simulator; RF equivalent circuit; Y-parameter analysis; multifinger bulk FinFET; shorted source/drain configuration; signal model parameter extraction; substrate resistance; CMOS technology; Circuit simulation; Equivalent circuits; FinFETs; Fingers; Geometry; MOSFETs; Nanoscale devices; Radio frequency; Semiconductor device modeling; Bulk FinFET; RF device modeling; equivalent circuit; substrate resistance; tied source/drain (S/D);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.902695
