Unified Subthreshold Model for Channel-Engineered Sub-100-nm Advanced MOSFET Structures

In this paper, a universal and computationally efficient subthreshold model for sub-100-nm nonuniformly doped channel MOSFET has been presented. The model incorporates drain-induced barrier lowering effect by means of the short-channel depletion width parameter d, which is evaluated using the voltage doping transformation method. The model can accurately predict the following: 1) surface potential; 2) electric field; 3) threshold voltage; and 4) subthreshold slope, for various lateral as well as transverse channel-engineered structures such as retrograde, graded channel, lightly doped drain (LDD), halo, and pocket implant technology for sub-100-nm channel length. In this paper, we have also proposed a novel device architecture incorporating the benefits of asymmetric halo and LDD doping. The analytical results have been verified by ATLAS 2-D device simulation software.