DocumentCode
1107181
Title
Numerically predicated on-resistances for 450-V GaAs power SIT´s operated in the bipolar mode
Author
Nakagawa, Akio
Author_Institution
Toshiba Research and Development Center, Kawasaki-shi, Japan
Volume
33
Issue
1
fYear
1986
fDate
1/1/1986 12:00:00 AM
Firstpage
167
Lastpage
170
Abstract
Electrical characteristics for 450-V GaAs power SIT\´s were numerically simulated. It was shown that GaAs SIT\´s can be operated in the biopolar mode even for low carrier lifetime cases. The on-resistances will be less than 
of those for silicon power MOSFET\´s and can be further reduced in the biopolar-mode operation.
of those for silicon power MOSFET\´s and can be further reduced in the biopolar-mode operation.Keywords
Charge carrier lifetime; Current-voltage characteristics; Electric variables; Electrons; Electrostatics; Gallium arsenide; Leakage current; Numerical simulation; Silicon; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22458
Filename
1485675
Link To Document