DocumentCode :
1107251
Title :
Auto-calibrated potential map drawing equipment and its application to characterization of plasma-coupled devices
Author :
Tamama, Teruo ; Kuji, Norio
Author_Institution :
NTT Atsugi Electrical Communication Laboratories, Kanagawa, Japan
Volume :
33
Issue :
2
fYear :
1986
fDate :
2/1/1986 12:00:00 AM
Firstpage :
192
Lastpage :
197
Abstract :
By utilizing the voltage contrast mode observed in a scanning electron microscope, the authors have fabricated equipment which they call auto-calibrated potential map drawing equipment (AP-MADE). This equipment can be used to observe the two-dimensional potential distribution on a semiconductor device surface and to draw its equipotential curves. Therefore, it can be used as a semiconductor device analyzer. Utilizing the APMADE, the transfer characteristics of plasma-coupled devices are analyzed in detail and its best asymmetric structure is pointed out quantitatively.
Keywords :
Computational modeling; Plasma applications; Plasma devices; Plasma measurements; Plasma properties; Sampling methods; Scanning electron microscopy; Semiconductor devices; System testing; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22464
Filename :
1485681
Link To Document :
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