DocumentCode :
1107252
Title :
Gain uniformity of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions
Author :
Holden, W.S. ; Campbell, J.C. ; Dentai, A.G.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Volume :
21
Issue :
9
fYear :
1985
fDate :
9/1/1985 12:00:00 AM
Firstpage :
1310
Lastpage :
1313
Abstract :
We report on the spatial uniformity of the gain 
of InP/ InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions (SAGM-APD\´s). Typically, these APD\´s exhibit less than 10 percent variation in the gain (for 
) over the entire photosensitive area. The small nonuniformity which is observed shows a one-to-one correspondence with inhomogeneities in the epitaxial layers of the SAGM-APD structure. We also observe a reduction in the effective photosensitive diameter with increasing bias voltage.
of InP/ InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions (SAGM-APD\´s). Typically, these APD\´s exhibit less than 10 percent variation in the gain (for ) over the entire photosensitive area. The small nonuniformity which is observed shows a one-to-one correspondence with inhomogeneities in the epitaxial layers of the SAGM-APD structure. We also observe a reduction in the effective photosensitive diameter with increasing bias voltage.Keywords :
Avalanche photodiodes; Gallium materials/devices; Absorption; Avalanche photodiodes; Dark current; Electric breakdown; Epitaxial layers; Gain measurement; Indium gallium arsenide; Indium phosphide; Neodymium; Voltage;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1985.1072848
Filename :
1072848
Link To Document :
