Current-Scaling a-Si:H TFT Pixel-Electrode Circuit for AM-OLEDs: Electrical Properties and Stability

Author

Lee, Hojin ; Lin, Yen-Chung ; Shieh, Han-Ping D. ; Kanicki, Jerzy

Author_Institution

Univ. of Michigan, Ann Arbor

Volume

54

Issue

9

fYear

2007

Firstpage

2403

Lastpage

2410

Abstract

We fabricated and characterized the hydrogenate amorphous-silicon thin-film transistor (a-Si:H TFT) pixel-electrode circuit with the current-scaling function that can be used for active-matrix organic light-emitting displays (AM-OLEDs). As expected from previously reported simulation results, the fabricated pixel-electrode circuit showed an enhanced current-scaling performance for a high-resolution AM-OLED based on a-Si:H TFTs in comparison to other types of current-driven pixel circuits. It also showed a better electrical and thermal stability for different OLED current levels in comparison to the conventional current-driven pixel-electrode circuit.

Keywords

amorphous semiconductors; circuit stability; driver circuits; organic light emitting diodes; silicon; thermal stability; thin film transistors; AM-OLED; Si:H - Binary; TFT pixel-electrode circuit; active-matrix organic light-emitting displays; current-driven pixel circuits; current-scaling function; electrical properties; hydrogenated amorphous-silicon thin-film transistor; thermal stability; Amorphous silicon; Circuit stability; Electrodes; Flat panel displays; Indium tin oxide; Ohmic contacts; Plasma temperature; Thermal stability; Thin film transistors; Wet etching; Active-matrix organic light-emitting display (AM-OLED); current program; current scaling; hydrogenate amorphous silicon (a-Si:H); pixel-electrode circuit; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.902665

Filename

4294221