Title :
Subtractive effect of charge integration on dual-gate CID readout with correlated double sampling
Author :
Wang, Samuel C H
Author_Institution :
General Electric Company, Syracuse, NY
fDate :
2/1/1986 12:00:00 AM
Abstract :
In this paper we describe the physical mechanisms of the "subtractive effect" on the dual-gate charge-injection device (CID) readout due to on-going charge integration during the time the video waveform is processed with correlated double sampling. Performance degradation of the CID area array caused by the subtractive effect and two correction schemes for eliminating the problems under different irradiation conditions are discussed.
Keywords :
Charge coupled devices; Charge transfer; Degradation; Interface states; Potential well; Sampling methods; Semiconductor device noise; Sensor arrays; Signal design; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22475