DocumentCode :
1107373
Title :
Subtractive effect of charge integration on dual-gate CID readout with correlated double sampling
Author :
Wang, Samuel C H
Author_Institution :
General Electric Company, Syracuse, NY
Volume :
33
Issue :
2
fYear :
1986
fDate :
2/1/1986 12:00:00 AM
Firstpage :
254
Lastpage :
259
Abstract :
In this paper we describe the physical mechanisms of the "subtractive effect" on the dual-gate charge-injection device (CID) readout due to on-going charge integration during the time the video waveform is processed with correlated double sampling. Performance degradation of the CID area array caused by the subtractive effect and two correction schemes for eliminating the problems under different irradiation conditions are discussed.
Keywords :
Charge coupled devices; Charge transfer; Degradation; Interface states; Potential well; Sampling methods; Semiconductor device noise; Sensor arrays; Signal design; Solid state circuits;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22475
Filename :
1485692
Link To Document :
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