DocumentCode :
1107392
Title :
Effect of Hydrogen implantation on polysilicon p-n junctions
Author :
Chen, Dao-Long ; Guzman, Alberto M. ; Greve, David W.
Author_Institution :
Carnegie-Mellon University, Pittsburgh, PA
Volume :
33
Issue :
2
fYear :
1986
fDate :
2/1/1986 12:00:00 AM
Firstpage :
270
Lastpage :
274
Abstract :
The effect of hydrogen implantation on the 
characteristics of lateral polysilicon p-n junctions is reported. After implantation with hydrogen and annealing at 400°C, a moderate decrease in the forward current and a large decrease in the reverse current is observed. In addition, the reverse breakdown voltage is increased. Best results were obtained for hydrogen dose of 1016cm-2. The measurements are explained by considering both electric field enhancement of emission and capture rates and the generation of new trap levels by ion implantation.
characteristics of lateral polysilicon p-n junctions is reported. After implantation with hydrogen and annealing at 400°C, a moderate decrease in the forward current and a large decrease in the reverse current is observed. In addition, the reverse breakdown voltage is increased. Best results were obtained for hydrogen dose of 1016cm-2. The measurements are explained by considering both electric field enhancement of emission and capture rates and the generation of new trap levels by ion implantation.Keywords :
Annealing; Grain boundaries; Hydrogen; Leakage current; P-n junctions; Passivation; Semiconductor diodes; Silicon; Substrates; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22477
Filename :
1485694
Link To Document :
