DocumentCode
1107413
Title
Resistive contrast imaging: A new SEM mode for failure analysis
Author
Smith, Craig Allyn ; Bagnell, C. Robert ; Cole, Edward I., Jr. ; DiBianca, Frank A. ; Johnson, Darryl G. ; Oxford, William V. ; Propst, Roy H.
Author_Institution
Honeywell Solid-State Electronics Division, Plymouth, MN
Volume
33
Issue
2
fYear
1986
fDate
2/1/1986 12:00:00 AM
Firstpage
282
Lastpage
285
Abstract
Semiconductor device path resistance is obtained from scanning electron microscope (SEM) images using a modified electron-beam-induced current (EBIC) mode. We call this new method resistance contrast imaging (RCI). The intensity of these images is proportional to internal device resistance ratios. Applications of the RCI method to device failure analysis are presented. This method is non-destructive and applicable to passivated devices.
Keywords
Acceleration; Cathode ray tubes; Charge carriers; Electron beams; Failure analysis; Immune system; Probes; Scanning electron microscopy; Virtual colonoscopy; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22479
Filename
1485696
Link To Document