Device Performance Improvement of PMOS Devices Fabricated by B2H6 PIII/PLAD Processing

It has been shown that plasma immersion ion implantation (PIII)/plasma doping (PLAD) processing offers unique advantages over conventional beam-line ion implant systems, including system simplicity, lower cost, higher throughput, and device performance improvements. A 78-nm channel length PMOS device, which is fabricated by a B₂H₆/H₂ PIII/PLAD process on source/drain doping, can offer better device performance that includes a 50% lower contact resistance (R_CS), 11%-16% higher drive current (I_DS), and transconductance (KL) than those fabricated by beam-line implantation. The physical mechanisms behind the device performance improvement can be correlated to the much lower R_CS, which in turn results from the unique dopant profiles of the PIII/PLAD process.