Title :
Highly Reliable 90-nm Logic Multitime Programmable NVM Cells Using Novel Work-Function-Engineered Tunneling Devices
Author :
Wang, Bin ; Nguyen, Hoc ; Ma, Yanjun ; Paulsen, Ron
Author_Institution :
Impinj Inc., Seattle
Abstract :
A highly reliable embedded logic multitime-programmable nonvolatile memory (NVM) has been developed in a standard 90-nm logic process with no process changes and a zero-mask adder. By using a novel work-function-engineered tunneling device and 70-Aring tunneling oxide, an excellent endurance of more than 500 k cycles has been achieved. Reliability of the NVM is evaluated against the traditional tunneling device, and a model is proposed to explain the observed reliability differences. Process manufacturability on retention has also been demonstrated over process variations on the thickness of silicide-blocking layers.
Keywords :
adders; leakage currents; programmable logic devices; random-access storage; tunnelling; embedded logic multitime-programmable nonvolatile memory; logic multitime programmable NVM cells; process manufacturability; silicide-blocking layers; size 90 nm; tunneling oxide; work-function-engineered tunneling devices; zero-mask adder; CMOS logic circuits; Leakage current; Logic arrays; Logic devices; Logic testing; Manufacturing processes; Nonvolatile memory; Reliability engineering; Stress; Tunneling; Defect generation rate; endurance; multitime programmable (MTP); nonvolatile memory (NVM); stress-induced leakage current (SILC); work-function engineered;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.903199
