DocumentCode :
1107628
Title :
The effect of distributed series resistance on the dark and illuminated current—Voltage characteristics of solar cells
Author :
Araújo, Gerardo L. ; Cuevas, Andrés ; Ruiz, Jose M.
Author_Institution :
Universidad Politécnica de Madrid, Madrid, Spain
Volume :
33
Issue :
3
fYear :
1986
fDate :
3/1/1986 12:00:00 AM
Firstpage :
391
Lastpage :
401
Abstract :
Distributed series resistance effects in solar cells are analyzed and the correctness of representing these by a lumped parameter is discussed for any conditions of bias and illumination. In addition to a general mathematical methodology, analytical expressions are derived to simplify the estimation of series resistance effects on the dark and illuminated J-V characteristics of the cell. The equivalent series resistance (rs) in the dark is found to decrease with current density J from r_{b} + r_{e}/3 at small J to ( r_{e} r_{b})^{1/2} at very high J , where reand rbare the emitter layer and base region resistances, respectively. For illuminated conditions rsdepends on J as well, being maximum near short-circuit and minimum near open-circuit; however, rsfurther depends on the photogenerated current JL: its short-circuit value increases with JLfrom r_{b} + r_{e}/3 to r_{b} + r_{e}/2 and the open-circuit value decreases with JLfrom r_{b} + r_{e}/3 to (r_{e}r_{b})^{1/2} . The variability of rsis therefore related to the relative importance of rband r_{e};r_{b} plays the role of attenuating this variability, a situation not well recognized previously. Previous theoretical and experimental work is critically reviewed throughout this paper.
Keywords :
Contact resistance; Current density; Current-voltage characteristics; Fabrication; Fingers; Lighting; Mathematical model; Metallization; Photovoltaic cells; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22500
Filename :
1485717
Link To Document :
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