Distributed series resistance effects in solar cells are analyzed and the correctness of representing these by a lumped parameter is discussed for any conditions of bias and illumination. In addition to a general mathematical methodology, analytical expressions are derived to simplify the estimation of series resistance effects on the dark and illuminated

characteristics of the cell. The equivalent series resistance (r
s) in the dark is found to decrease with current density

from

at small

to (

at very high

, where r
eand r
bare the emitter layer and base region resistances, respectively. For illuminated conditions r
sdepends on

as well, being maximum near short-circuit and minimum near open-circuit; however, r
sfurther depends on the photogenerated current J
L: its short-circuit value increases with J
Lfrom

to

and the open-circuit value decreases with J
Lfrom

to

. The variability of r
sis therefore related to the relative importance of r
band

plays the role of attenuating this variability, a situation not well recognized previously. Previous theoretical and experimental work is critically reviewed throughout this paper.